Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R
Assertion A: Diffusion current in a p-n junction is greater than the drift current in magnitude if the junction is forward biased.
Reason R: Diffusion current in a p-n junction is from the n-side to the p-side if the junction is forward biased.
In the light of the above statements, choose the most appropriate answer from the options given below
Assertion A: Diffusion current in a p-n junction is greater than the drift current in magnitude if the junction is forward biased.
Reason R: Diffusion current in a p-n junction is from the n-side to the p-side if the junction is forward biased.
In the light of the above statements, choose the most appropriate answer from the options given below
- (A)Both and are correct and is the correct explanation of
- (B)Both and are correct but is NOT the correct explanation of
- (C) is correct but is not correct✓ Correct
- (D) is not correct but is correct
Answer: (C)
Solution
In forward bias the lowered potential barrier lets majority carriers cross readily, so the diffusion current exceeds the drift current, making the assertion correct. The diffusion current is carried by holes moving from the p-side to the n-side and electrons moving from the n-side to the p-side, so the conventional diffusion current is directed from the p-side to the n-side, not from the n-side to the p-side as the reason claims. The assertion is correct but the reason is not correct.
JEE Main · 2023 · 06 Apr 2023 · Shift 2 · Single correct option